Manufacturer Part #
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
|Standard Pkg:|| |
Product Variant Information section
50 per Tube
Change Description:Capacity extension with introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME), China for TO220 3L MOSFET products in Gen 5.X/7.X/10.X (up to Hex 4.4). Reason: Expansion of assembly and final test production to assure continuity of supply and enable flexible manufacturing.
Removal of label on tube affecting TO packages from legacy IR and packed at all subcon partners .Standardization of legacy IR products with Infineon Technologies (IFX) packing. Reason: This change will apply to all IFX subcon partners. However, parts coming from Rectificadores Internacionales, S.A. de C.V., Tijuana , Mexico (IRMX) will continue to have the tube label. This will be implemented in multiple phase as subcon partners implement the change in their manufacturing facilities. During this duration, there will be situation that customers will receive shipments with and without labels as we cannot remove all labels in all existing inventories. Infineon does not see any negative impact on quality, function and reliability as it is only standardization of packing.
Detailed Change Information: Change of lot number format in bar code labelling and marking of physical units affecting TDSON, TO220, TO247, TO252, TO263, and TSDSON at ASE (WEI HAI), INC. Reason: Standardization of International Rectifier (IR) Legacy products with Infineon Technologies (IFX) lot number nomenclature format.
|No of Channels:||1|
|Drain-to-Source Voltage [Vdss]:||100V|
|Drain-Source On Resistance-Max:||44mΩ|
|Rated Power Dissipation:||130W|
|Qg Gate Charge:||71nC|
|Gate-Source Voltage-Max [Vgss]:||20V|
|Turn-on Delay Time:||11ns|
|Turn-off Delay Time:||39ns|
|Operating Temp Range:||-55°C to +175°C|
|Gate Source Threshold:||4V|
|Height - Max:||8.77mm|
|Package Style:||TO-220-3 (TO-220AB)|
Features & Applications
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
The IRF540NPBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.
50 per Tube