text.skipToContent text.skipToNavigation

Manufacturer Part #

IRF640NPBF

Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1850
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.15Ω
Rated Power Dissipation: 150W
Qg Gate Charge: 67nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 23ns
Rise Time: 19ns
Fall Time: 5.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 1160pF
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The IRF640NPBF is a Fifth Generation HEXFET® Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.  For more information, please see the datasheet.

The IRF640NPBF comes in a TO-220 package.  PBF indicates Leadfree.
Pricing Section
Stock:
3,603
Minimum Order:
1
Multiple Of:
1
14,812
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.56
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1
$0.555
125
$0.49
400
$0.475
1,500
$0.46
5,000+
$0.445
Product Variant Information section