Manufacturer Part #
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3
|Standard Pkg:|| |
Product Variant Information section
50 per Tube
Removal of label on tube affecting TO packages from legacy IR and packed at all subcon partners .Standardization of legacy IR products with Infineon Technologies (IFX) packing. Reason: This change will apply to all IFX subcon partners. However, parts coming from Rectificadores Internacionales, S.A. de C.V., Tijuana , Mexico (IRMX) will continue to have the tube label. This will be implemented in multiple phase as subcon partners implement the change in their manufacturing facilities. During this duration, there will be situation that customers will receive shipments with and without labels as we cannot remove all labels in all existing inventories. Infineon does not see any negative impact on quality, function and reliability as it is only standardization of packing.
Detailed Change Information: Change of lot number format in bar code labelling and marking of physical units affecting TDSON, TO220, TO247, TO252, TO263, and TSDSON at ASE (WEI HAI), INC. Reason: Standardization of International Rectifier (IR) Legacy products with Infineon Technologies (IFX) lot number nomenclature format.
Description: Standard Labels Change Detailed Change Information: Add 2D barcode and add human readable MA number. Reason: This barcode will be used in SAP to our put away process. Product Identification: These labels are used on primary (e.g., tube, reel, bag) and intermediate boxes (e.g., tube box, reel box). Impact of change:No Impact; the labels will contain the current information Standard Bar Code, plus 2D barcode and MA Number. Intended start of Delivery: NOV. 09, 2017
Description: Standard Labels ChangeDetailed change information:Subject: Add 2D barcode and add human readable MA number.Reason: This barcode will be used in SAP to our put away process.These labels are used on primary (e.g., tube, reel, bag) and intermediate boxes (e.g., tube box, reel box).Intended start of delivery:10-November-2017
|No of Channels:||1|
|Drain-to-Source Voltage [Vdss]:||200V|
|Drain-Source On Resistance-Max:||0.15Ω|
|Rated Power Dissipation:||150W|
|Qg Gate Charge:||67nC|
|Gate-Source Voltage-Max [Vgss]:||20V|
|Turn-on Delay Time:||10ns|
|Turn-off Delay Time:||23ns|
|Operating Temp Range:||-55°C to +175°C|
|Gate Source Threshold:||4V|
|Technology:||Advanced Process Technology|
|Height - Max:||9.02mm|
|Package Style:||TO-220-3 (TO-220AB)|
Features & Applications
The IRF640NPBF is a Fifth Generation HEXFET® Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. For more information, please see the datasheet.The IRF640NPBF comes in a TO-220 package. PBF indicates Leadfree.
50 per Tube