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Manufacturer Part #


Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2029
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 31mΩ
Rated Power Dissipation: 3.6W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 9.4ns
Turn-off Delay Time: 14ns
Rise Time: 9.7ns
Fall Time: 3.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 0.81mm
Length: 5mm
Input Capacitance: 2300pF
Package Style:  PQFN 5 x 6 mm
Mounting Method: Surface Mount
Features & Applications

International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5015TRPBF that delivers the industry’s lowest on-state resistance (RDS(on)).

The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5015TRPbF is  a 150V device delivers industry leading RDS(on) of only 31 mOhm (max.) at 10V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.

The 150V IRFH5015TRPBF is designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5015TRPBF features ultra low RDS(on) of 31mOhm (max.) combined with just 33 nC gate charge (Qg).

In addition to achieving excellent thermal performance, as a result of using the IRFH5015TRPBF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.

The IRFH5015TRPBF is a 150V, 31Mohms, 56a, PQFN(5x6) copper clip mosfet.

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Product Variant Information section