Manufacturer Part #
IR2110S Series Dual 20V Surface Mount High and Low Side Driver - SOIC-16
|Standard Pkg:|| |
Product Variant Information section
Change of wafer production from Infineon Technologies Americas Corp., Temecula CA., USA to Silicon Foundry Vanguard International Semiconductor Corporation, Taiwan for HVIC Gen 1 and Gen 2 wafers NewWafer fab: Silicon Foundry Vanguard International Semiconductor Corporation, Taiwan, 8" wafer Wafer sort: ETREND Hightech Corp., Taiwan
REPROCESSING OF THE ATTACHED INFINEON PCN WITH AN EXPANDED PART LIST.Change Description: Change of Lot Number Format in Bar Code Labeling.Change Lot Number in Bar Code Label from 9 characters based on split lot or mother lot to 8 characters based on mother lot.Reason: Standardization of IR Legacy products with Infineon format on Lot Number format in Bar Code labels.
Change of Lot Number Format in Bar Code LabelingReason: Standardization of IR Legacy products with Infineon format on Lot Number format in Bar Code labels.Old: Lot Number in Bar Code Label is 9 characters based on split lot or mother lot.New: Is 8 characters based on mother lot or Is 11 characters based on split lot.
Change of Lot Number Format in Bar Code LabelingStandardization of IR Legacy products with Infineon format on Lot Number format in Bar Code labels.Old: Lot Number in Bar Code Label is 9 characters based on split lot or mother lot.New: Is 8 characters based on mother lot or is 11 characters based on split lot.
|Configuration:||High and Low Side|
|No of Outputs:||Dual|
|Peak Output Current:||2.5A|
|Rated Power Dissipation:||1.25W|
|Turn-off Delay Time:||125ns|
|Turn-on Delay Time:||150ns|
|Operating Temp Range:||-55°C to +150°C|
|Mounting Method:||Surface Mount|
Features & Applications
International Rectifier (IR) is a pioneer and world leader in advanced power management technology, from digital, analog and mixed-signal ICs to advanced circuit devices, power systems and components. The world's leading manufacturers of computers, appliances, automobiles, consumer electronics and defense systems rely on IR technology to drive the performance and efficiency of their products. Today, power management technology plays a more important role than ever in saving the world's dwindling energy reserves while tackling tough technology roadblocks.
A IGBT has the output switching and conduction characteristics of a bipolar transistor but is voltage-controlled like a MOSFET. In general, this means it has the advantages of high-current handling capability of a bipolar with the ease of control of a MOSFET. The IGBT still has the disadvantages of a comparatively large current tail and no body drain diode.
The MOSFET is a device that is voltage- and not current-controlled. MOSFETs have a positive temperature coefficient, stopping thermal runaway. The on-state-resistance has no theoretical limit, hence on-state losses can be far lower. The MOSFET also has a body-drain diode, which is particularly useful in dealing with limited free wheeling currents.
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
The IR2110S is a 16 pin SOIC that is fully operational to +500V or +600V tolerant to negative transient voltage, contains a Gate drive supply range from 10 to 20V and is 3.3V logic compatible.