Manufacturer Part #
Single N-Channel 500 V 0.27 Ohm Flange Mount Power Mosfet - TO-247
|Standard Pkg:|| |
Product Variant Information section
25 per Tube
Commercial Power MOSFET Manufacturing Capacity ExpansionDESCRIPTION OF CHANGE: To meet increasing demand for Power MOSFET products, Vishay Siliconix has expanded assembly and test capacity on commercial High Voltage Power MOSFETs in Vishay’s TO247AC package. ASE has been a leading backend manufacturing company since 2003; The Weihai facility has provided world-class total manufacturingservices for discrete MOSFETs since 2008. Vishay Siliconix has been a partner with the ASE Weihai facility since 2013. This qualification now adds TO-247AC to other Vishay Siliconix commercial Power MOSFET packages supplied by ASE. The manufacturing process to be used in ASE is similar to that used in the Vishay Xi’an and GEM Hefei facilities from which this package is currently manufactured.ASE has received international quality systems and environmental compliance certifications including TS16949, ISO9001, ISO14001 and OSHAS 18001.REASON FOR CHANGE: Manufacturing capacity expansionEXPECTED INFLUENCE ON QUALITY/RELIABILTY/PERFORMANCE: There will be no affect on the quality, reliability, or performance. There will be no changes in minimum and maximum values on the data sheets. The finished good appearance and outline dimension variance are shown in annex.TIME SCHEDULE:Start Shipment Date: Fri Jan 1, 2021
SUBJECT: Introduction of an improved packing tube design affecting products in packageTO-247AC at GEM Electronics, Hefei, ChinaThis advisory is being provided to you as an announcement that we will introduce an improved packing tube design for TO-247AC package assembly at GEM Electronics, Hefei, ChinaThe new tube design (option 2) will be implemented starting from mid of November 2019 onwards. Old tube design availability (option 1) will depend on distribution inventory status after mid of November 2019.
Additional Commercial Power MOSFET Wafer Fabrication Capacity DESCRIPTION OF CHANGE: To meet increasing demand for High Voltage Power MOSFET products, Vishay Siliconix has completed the qualification for the expansion of commercial High Voltage MOSFET capacity with foundry partner Founder Microelectronics International Co. Ltd. (FMIC) in Shenzhen, China. FMIC wafer fab contains a 96,000 square-meter clean-room facility which was opened in 2003, and employs highly-skilled wafer production personnel who have been qualified to follow the same quality systems and integration engineering currently supporting Vishay products. REASON FOR CHANGE: Increased High Voltage MOSFET wafer fabrication capacity.
|Drain-to-Source Voltage [Vdss]:||500V|
|Drain-Source On Resistance-Max:||270mΩ|
|Rated Power Dissipation:||280|W|
|Qg Gate Charge:||210nC|
|Mounting Method:||Through Hole|
25 per Tube