text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 81,000

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $0.615
250 $0.28
500 $0.27
750 $0.26
1,500+ $0.25


Attributes Table
Fet Type Dual P-Ch
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max 0.17Ω
Rated Power Dissipation 0.7|W
Qg Gate Charge 3.5nC
Features and Applications

The FDC6506P is a part of FDC6506 Series 30 V 0.17 Ω Dual P-Channel logic level MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.


  • -1.8 A, -30 V. RDS(on) = 0.170 W @ VGS = -10 V
  • RDS(on) = 0.280 W @ VGS = -4.5 V
  • Low gate charge (2.3nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM-6 package


  • Load switch
  • Battery protection
  • Power management