On Order: 0
Factory Stock:Factory Stock: 0
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|Fet Type||Dual P-Ch|
|Drain-to-Source Voltage [Vdss]||30V|
|Drain-Source On Resistance-Max||0.17Ω|
|Rated Power Dissipation||0.7|W|
|Qg Gate Charge||3.5nC|
Features and Applications
The FDC6506P is a part of FDC6506 Series 30 V 0.17 Ω Dual P-Channel logic level MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
- -1.8 A, -30 V. RDS(on) = 0.170 W @ VGS = -10 V
- RDS(on) = 0.280 W @ VGS = -4.5 V
- Low gate charge (2.3nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- SuperSOTTM-6 package
- Load switch
- Battery protection
- Power management