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Manufacturer Part #

PMF170XP,115

P-Channel 20 V 200 mOhm 290 mW 2.6 nC TrenchMOS FET - SOT-323

Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 1937
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 200mΩ
Rated Power Dissipation: 290mW
Qg Gate Charge: 2.6nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 1A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 31ns
Rise Time: 16ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Input Capacitance: 280pF
Package Style:  SOT-323 (SC-70)
Mounting Method: Surface Mount
Features & Applications

The PMF170XP,115 is a P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features:

  • Low RDSon
  • Very fast switching
  • Trench MOSFET technology

Applications:

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Pricing Section
Stock:
0
Minimum Order:
18,000
Multiple Of:
3,000
15,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
4 Weeks
Total
$1,355.40
USD
Quantity
Web Price
3,000
$0.0909
9,000
$0.0761
15,000
$0.0753
60,000
$0.0733
90,000+
$0.0727
Product Variant Information section