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Manufacturer Part #

FCD9N60NTM

Single N-Channel 600 V 92.6 W 17.8 nC Silicon Surface Mount Mosfet - TO-252-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1933
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.385Ω
Rated Power Dissipation: 92.6W
Qg Gate Charge: 17.8nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 9A
Turn-on Delay Time: 13.2ns
Turn-off Delay Time: 28.7ns
Rise Time: 9.6ns
Fall Time: 11.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 735pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
5,000
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,125.00
USD
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Quantity
Web Price
2,500+
$0.85
Product Variant Information section