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Manufacturer Part #

IRLL2705TRPBF

Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223

Mfr. Name: Infineon
Standard Pkg:
Date Code: 1915
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.065Ω
Rated Power Dissipation: 2.1W
Qg Gate Charge: 48nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 5.2A
Turn-on Delay Time: 6.2ns
Turn-off Delay Time: 35ns
Rise Time: 12ns
Fall Time: 22ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Advanced Process Technology
Height - Max: 1.8mm
Length: 6.7mm
Input Capacitance: 870pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Stock:
6,375
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1.01
USD
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Quantity
Web Price
1
$1.01
50
$0.65
100
$0.605
250
$0.545
500+
$0.505