text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 201,000

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 3,000
Multiple Of: 3,000
Quantity Web Price
3,000 $0.58
6,000 $0.495
9,000+ $0.495
Total:

$1,740.00

USD
Attributes
Attributes Table
Fet Type P-Ch
Drain-to-Source Voltage [Vdss] 60V
Drain-Source On Resistance-Max 100mΩ
Rated Power Dissipation 2.1|W
Qg Gate Charge 20nC
Features and Applications

The FDMC5614P is a 60 V 100 mΩ P-Channel PowerTrench® Mosfet this P-Channel MOSFET is a rugged gate version of advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V-20 V).

Features:

  • Max rDS(on) = 100 mΩ @ VGS = -10 V,ID = -5.7A
  • Max rDS(on) = 135 mΩ @ VGS = -4.5 V,ID = -4.4A
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremely lowrDS(on)
  • High power and current handling capability
  • RoHS Compliant

Applications:

  • Automation
  • Building & Home Control
  • Consumer Appliances
  • Medical Electronics/Devices
  • Military & Civil Aerospace
  • Mobile Comm Infrastructure
  • Storage & Peripherals