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Manufacturer Part #

NTD2955T4G

Single P-Channel 60 V 0.18 Ohm 30 nC 55 W Silicon SMT Mosfet - TO-252-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -60V
Drain-Source On Resistance-Max: 0.18Ω
Rated Power Dissipation: 55W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -12A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 40ns
Rise Time: 85ns
Fall Time: 90ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: -4V
Technology: Si
Height - Max: 2.38mm
Length: 6.73mm
Input Capacitance: 500pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
61,145
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Total
$0.88
USD
Quantity
Web Price
1
$0.875
50
$0.665
100
$0.635
250
$0.595
500+
$0.565