Manufacturer Part #
N-Channel 40 V 0.042 Ohm 2.1 W Surface Moun Power Mosfet - SOT-23-3
|Standard Pkg:|| |
Product Variant Information section
As part of the Vishay Siliconix commitment to delivering customers with reliable and cost-effective products, we are announcing the expansion of assembly and test capacity in our trade-friendly facility in Kaohsiung, Taiwan on selected LVM Power MOSFETs. The package types included are the TSOP6 and SSOT23. Power MOSFETs shipped from this facility will be tariff-free. This advisory is intended for US based customers and orders.To take advantage of this tariff-free initiative, customers will need to order the parts with a new ordering prefix code�_BE3� (instead of our standard _GE3). The table showing the current and new ordering codes can be found on page 2, 3 and 4 of this document.
Additional Commercial Low Voltage MOSFET Manufacturing & Test CapacityDESCRIPTION OF CHANGE: Vishay is pleased to announce the qualification for manufacturing and test capacity at ASE Technology Holding Co., Ltd, China (ASE, Weihai) for Vishay�s PPAK 1212 and SSOT23 products. ASE, Weihai is a high-quality subcontracting partner for Vishay and has been in production for Vishay Power MOSFET products for over 5 years. ASE, Weihai is certified to ISO9001, ISO/TS16949 and ISO 14001 standards.REASON FOR CHANGE: Capacity expansion.
Additional Commercial Power MOSFET Wafer Fabrication Capacity DESCRIPTION OF CHANGE: To meet increasing demand for Low Voltage Power MOSFET products, Vishay Siliconix has completed qualification for the expansion of commercial Low Voltage MOSFET 8-inch wafer capacity to foundry partner Tower-Jazz located in San Antonio, Texas. Tower-Jazz is a wholly-owned subsidiary of Tower Semiconductor, Ltd. The 80,000 square-foot clean-room facility was opened by Maxim Integrated in 2008, and will retain highly-skilled production personnel, quality systems and integration engineering currently supporting Maxim and Vishay. The Tower Texas facility supports advanced analog platforms for die geometries with feature sizes down to 130nm. REASON FOR CHANGE: Increased Low Voltage MOSFET manufacturing capacity.
|Drain-to-Source Voltage [Vdss]:||40V|
|Drain-Source On Resistance-Max:||0.042Ω|
|Rated Power Dissipation:||2.1W|
|Qg Gate Charge:||9nC|
|Package Style:||SOT-23 (SC-59,TO-236)|
|Mounting Method:||Surface Mount|