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Manufacturer Part #

FDMS86200

N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 21mΩ
Rated Power Dissipation: 104|W
Qg Gate Charge: 26nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS86200 is a N-Channel MOSFET.

Features:

  • Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
  • Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications:

  • DC-DC Conversion
Pricing Section
Stock:
3,000
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1.70
USD
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Quantity
Web Price
1
$1.70
50
$1.35
100
$1.30
500
$1.18
1,500+
$1.11