text.skipToContent text.skipToNavigation

Manufacturer Part #

2N7000

N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1932
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 400|mW
Package Style:  TO-92
Mounting Method: Through Hole
Features & Applications

The 2N7000 is a 60 V, 5 Ω N-Channel Enhancement Mode Field Effect Transistor produced using high cell density DMOS technology.

This product have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A.

Features:

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Applications:

  • Servo motor control
  • Switching applications
Pricing Section
Stock:
81,629
Minimum Order:
1
Multiple Of:
1
30,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.09
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1
$0.0904
400
$0.0786
1,500
$0.0763
4,000
$0.0746
15,000+
$0.0723
Product Variant Information section