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Manufacturer Part #

FCD850N80Z

MOSFET N-CH 800V 6A DPAK

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2017
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 850mΩ
Rated Power Dissipation: 75|W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 40ns
Rise Time: 10ns
Fall Time: 4.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 990pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
62,500
Minimum Order:
2,500
Multiple Of:
2,500
250,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,825.00
USD
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Quantity
Web Price
2,500
$0.73
5,000
$0.59
7,500+
$0.585
Product Variant Information section