Manufacturer Part #
Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - D2PAK
|Standard Pkg:|| |
Product Variant Information section
|Drain-to-Source Voltage [Vdss]:||55V|
|Drain-Source On Resistance-Max:||0.02Ω|
|Rated Power Dissipation:||3.8|W|
|Qg Gate Charge:||180nC|
|Package Style:||TO-263-3 (D2PAK)|
|Mounting Method:||Surface Mount|
Features & Applications
The IRF4905STRLPBF is a Fifth Generation HEXFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. For more information, please see the datasheet above.The IRF4905STRLPBF comes in a D2PAK package. The TR indicates Tape and Reel, and the PBF indicates Lead Free.