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Manufacturer Part #

BSC010NE2LSIATMA1

Single N-Channel 25 V 1.05 mOhm 59 nC OptiMOS™ Power Mosfet - TDSON-8

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2027
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.05mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 59nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 6.3ns
Turn-off Delay Time: 32ns
Rise Time: 6.2ns
Fall Time: 4.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 4200pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
5,000
Multiple Of:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$3,400.00
USD
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Quantity
Web Price
5,000+
$0.68
Product Variant Information section