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Manufacturer Part #

IRF7404TRPBF

Single P-Channel 20 V 0.06 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.04Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 7.7A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 100ns
Rise Time: 32ns
Fall Time: 65ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.7V
Technology: Generation V
Input Capacitance: 1500pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Stock:
8,000
Minimum Order:
4,000
Multiple Of:
4,000
4,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,120.00
USD
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Quantity
Web Price
4,000
$0.28
8,000
$0.265
12,000
$0.255
16,000+
$0.24