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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 54,000

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: 8 Weeks
Minimum Order: 1,000
Multiple Of: 1,000
Quantity Web Price
1,000 $0.585
2,000 $0.515
3,000 $0.515
4,000 $0.51
5,000+ $0.51


Attributes Table
CE Voltage-Max 600V
Collector Current @ 25C 20A
Power Dissipation-Tot 65W
Gate - Emitter Voltage ±20V
Pulsed Collector Current 30A
Collector - Emitter Saturation Voltage 2.5V
Turn-on Delay Time 17ns
Turn-off Delay Time 72ns
Qg Gate Charge 19nC
Reverse Recovery Time-Max 22ns
Leakage Current -100A
Input Capacitance 380pF
Thermal Resistance 62.5°C/W
Operating Temp Range -55°C to +150°C
No of Terminals 3
Features and Applications

The STGB10NC60KDT4 is a N-Channel Short Circuit PowerMESH IGBT Transistor. This resulting in an excellent trade-off between switching performance and low on-state behavior.


  • Lower on voltage drop (VCE(sat))
  • Lower CRES / CIES ratio (no cross-conduction susceptibility)
  • Very soft ultra fast recovery antiparallel diode
  • Short-circuit withstand time 10μs


  • High frequency motor controls
  • SMPS and PFC in both hard switch and resonant topologies
  • Motor drives