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Manufacturer Part #

IRLML6402TRPBF

Single P-Channel 20 V 0.065 Ohm 8 nC HEXFET® Power Mosfet - MICRO-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.065Ω
Rated Power Dissipation: 1.3|W
Qg Gate Charge: 8nC
Package Style:  MICRO-3
Mounting Method: Surface Mount
Features & Applications
The IRLML6402TRPBF is a 20 V fast switching Single P-Channel HEXFET Power Mosfet, available in a low profile MICRO-3 package.

It utilizes a advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in many applications.

Features:

  • Ultra Low On-Resistance
  • P-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • Lead-Free
  • Halogen-Free

Applications:

  • Battery
  • Load Management
  • Portable electronics
  • PCMCIA cards
Pricing Section
Stock:
183,000
Minimum Order:
3,000
Multiple Of:
3,000
759,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$259.20
USD
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
3,000
$0.0864
9,000
$0.0825
15,000
$0.0823
30,000
$0.082
60,000+
$0.0817