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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 48

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: 25 Weeks
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $17.67
5 $16.12
10 $15.49
25 $14.71
50+ $14.14


Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 40V
Rated Power Dissipation 73W
Gate-Source Voltage-Max [Vgss] 20V
Drain Current 5A
Technology Si
Input Capacitance 89pF
Features and Applications

The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz.

The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.


  • Excellent thermal stability
  • Common source configuration
  • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V
  • New RF plastic package