On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: 25 Weeks
|No of Channels||1|
|Drain-to-Source Voltage [Vdss]||40V|
|Rated Power Dissipation||73W|
|Gate-Source Voltage-Max [Vgss]||20V|
Features and Applications
The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz.
The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
- Excellent thermal stability
- Common source configuration
- POUT = 2 W with 15 dB gain @ 960 MHz / 28 V
- New RF plastic package