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Manufacturer Part #

IRF530NSTRLPBF

Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK

Mfr. Name: Infineon
Standard Pkg:
Date Code: 2012
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 90mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 37nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 17A
Turn-on Delay Time: 9.2ns
Turn-off Delay Time: 35ns
Rise Time: 22ns
Fall Time: 25ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 920pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
8,800
Minimum Order:
800
Multiple Of:
800
18,400
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$424.00
USD
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Quantity
Web Price
800
$0.53
1,600
$0.445
3,200
$0.44
4,000
$0.435
12,000+
$0.425