|No of Outputs||Dual|
|Peak Output Current||210mA|
|Rated Power Dissipation||0.625W|
|Turn-off Delay Time||220ns|
|Turn-on Delay Time||820ns|
|Operating Temp Range||-55°C to +150°C|
Features and Applications
A IGBT has the output switching and conduction characteristics of a bipolar transistor but is voltage-controlled like a MOSFET. In general, this means it has the advantages of high-current handling capability of a bipolar with the ease of control of a MOSFET. The IGBT still has the disadvantages of a comparatively large current tail and no body drain diode.
The MOSFET is a device that is voltage- and not current-controlled. MOSFETs have a positive temperature coefficient, stopping thermal runaway. The on-state-resistance has no theoretical limit, hence on-state losses can be far lower. The MOSFET also has a body-drain diode, which is particularly useful in dealing with limited free wheeling currents.
The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.
The IR2104S is a 8 pin SOIC with 3.3 V, 5 V and 15 V input logic compatible that is fully operational to +600 V, tolerant to negative transient voltage and dV/dt immune and has a Gate drive supply range from 10 to 20V.