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Manufacturer Part #

HGTD1N120BNS9A

HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2002
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 5.3A
Power Dissipation-Tot: 60W
Turn-on Delay Time: 15ns
Turn-off Delay Time: 67ns
Package Style:  TO-252AA
Mounting Method: Surface Mount
Features & Applications

The HGTD1N120BNS9A is a N-Channel Non-punch Through (NPT) IGBT Transistor. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedence of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is deal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors.

Features:

  • 5.3 A, 1200 V, Tc=25°C
  • 1200 V switching SOA Capability
  • Typical Eoff = 120µJ at Tj=150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Avalanche Rated

Applications:

  • Military
  • Industrial
  • Consumer

 

 

Pricing Section
Stock:
2,500
Minimum Order:
2,500
Multiple Of:
2,500
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,712.50
USD
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Quantity
Web Price
2,500
$0.685
5,000
$0.555
7,500+
$0.55