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Manufacturer Part #

HGTG18N120BND

HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1943
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 54A
Power Dissipation-Tot: 390W
Turn-on Delay Time: 23ns
Turn-off Delay Time: 170µs
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The HGTG18N120BND is a Non–Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features:

  • 54 A, 1200 V, TC = 25&°C
  • 1200 V Switching SOA Capability
  • Typical Fall Time . . . . . . . . . . . . . . . 140 ns at TJ = 150&°C
  • Short Circuit Rating
  • Low Conduction Loss

Applications:

  • TBA

 

 

Pricing Section
Stock:
390
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$3.58
USD
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Quantity
Web Price
1
$3.58
30
$2.88
100
$2.66
250
$2.51
750+
$2.34
Product Variant Information section