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Manufacturer Part #

HGTG20N60A4D

HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1939
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 70A
Power Dissipation-Tot: 290W
Turn-on Delay Time: 15ns
Turn-off Delay Time: 73ns
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150 oC.

The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Features:

  • >100 kHz Operation At 390 V, 20 A
  • 200 kHz Operation At 390 V, 12 A
  • 600 V Switching SOA Capability
  • Typical Fall Time . . . . . . . . . . . . . . . . 55 ns at TJ = 125 oC
  • Low Conduction Loss
  • Temperature Compensating SABER™ Model

Applications:

  • TBA

 

 

Pricing Section
Stock:
5,040
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2.86
USD
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Quantity
Web Price
1
$2.86
30
$2.18
100
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300
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1,000+
$1.65
Product Variant Information section