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Manufacturer Part #

HGTG30N60B3D

HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2009
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 60A
Power Dissipation-Tot: 208W
Turn-on Delay Time: 36ns
Turn-off Delay Time: 137ns
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The HGTG30N60B3D is a N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode. It combines the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors. 

Features:

  • 60 A, 600 V, Tc=25°C
  • 600 V switching SOA Capability
  • Typical Fall Time at 90ns at Tj=150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-parallel Diode

Applications:

  • Military
  • Industrial
  • Consumer
Pricing Section
Stock:
90
Minimum Order:
30
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$165.60
USD
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Quantity
Web Price
30
$5.52
90
$4.69
120
$4.64
300
$4.49
450+
$4.42
Product Variant Information section