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Manufacturer Part #

BSH202,215

BSH202 Series 30 V 0.9 Ohm 417 mW P-Channel Enhancement MOS Transistor - SOT-23

Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 1846
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.9Ω
Rated Power Dissipation: 417mW
Qg Gate Charge: 2.9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.52A
Turn-on Delay Time: 2ns
Turn-off Delay Time: 45ns
Rise Time: 4.5ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.9V
Technology: Si
Input Capacitance: 80pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The BSH202,215 is a -30 V 0.9 Ω 417 mW P-Channel Enhancement Mode,logic level, field-effect power transistor. Operating temperature ranges from -55 to 150°C and is available in SOT-23 Subminiature Surface Mount Package.

This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

Features:

  • Low threshold voltage VDS = -30 V
  • Fast switching
  • Logic level compatible

 

 

Pricing Section
Stock:
30,000
Minimum Order:
3,000
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Total
$294.30
USD
Quantity
Web Price
3,000
$0.0981
6,000
$0.0802
9,000
$0.0794
12,000
$0.0789
15,000+
$0.0785
Product Variant Information section