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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 6,000

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: 4 Weeks
Minimum Order: 3,000
Multiple Of: 3,000
Quantity Web Price
3,000 $0.0867
9,000 $0.0771
12,000 $0.0768
30,000 $0.0759
45,000+ $0.0755
Total:

$260.10

USD
Attributes
Attributes Table
Fet Type P-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max 0.9Ω
Rated Power Dissipation 417mW
Qg Gate Charge 2.9nC
Gate-Source Voltage-Max [Vgss] 20V
Drain Current 0.52A
Turn-on Delay Time 2ns
Turn-off Delay Time 45ns
Rise Time 4.5ns
Fall Time 20ns
Operating Temp Range -55°C to +150°C
Gate Source Threshold 1.9V
Technology Si
Input Capacitance 80pF
Features and Applications

The BSH202,215 is a -30 V 0.9 Ω 417 mW P-Channel Enhancement Mode,logic level, field-effect power transistor. Operating temperature ranges from -55 to 150°C and is available in SOT-23 Subminiature Surface Mount Package.

This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

Features:

  • Low threshold voltage VDS = -30 V
  • Fast switching
  • Logic level compatible