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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 0

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: 4 Weeks
Minimum Order: 1
Multiple Of: 1,000
Quantity Web Price
1 $0.46
50 $0.245
100 $0.22
250 $0.19
500+ $0.17
Total:

$0.46

USD
Attributes
Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 200V
Drain-Source On Resistance-Max
Rated Power Dissipation 1W
Qg Gate Charge 10nC
Gate-Source Voltage-Max [Vgss] 20V
Drain Current 0.4A
Turn-on Delay Time 2.7ns
Turn-off Delay Time 16.4ns
Rise Time 6ns
Fall Time 20ns
Operating Temp Range -65°C to +150°C
Gate Source Threshold 2.8V
Technology Si
Height - Max 1.6mm
Length 4.6mm
Input Capacitance 100pF
Features and Applications

The BSS87 Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only

Features:

  • Low conduction losses due to low on-state resistance
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families

Applications:

  • Applications in relay, high-speed and line transformer drivers
  • Line current interrupter in telephone sets