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Manufacturer Part #

BSS87,115

BSS87 Series 200 V 1 W 10 nC N-Channel Silicon Surface Mount MOSFET - SOT-89

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 1W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.4A
Turn-on Delay Time: 2.7ns
Turn-off Delay Time: 16.4ns
Rise Time: 6ns
Fall Time: 20ns
Operating Temp Range: -65°C to +150°C
Gate Source Threshold: 2.8V
Technology: Si
Height - Max: 1.6mm
Length: 4.6mm
Input Capacitance: 100pF
Package Style:  SOT-89 (SC-62)
Mounting Method: Surface Mount
Features & Applications

The BSS87 Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only

Features:

  • Low conduction losses due to low on-state resistance
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families

Applications:

  • Applications in relay, high-speed and line transformer drivers
  • Line current interrupter in telephone sets
Pricing Section
Stock:
48,000
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
4 Weeks
Total
$0.44
USD
Quantity
Web Price
1
$0.44
50
$0.265
100
$0.24
250
$0.215
500+
$0.197