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Manufacturer Part #

FDG8842CZ

Dual N & P-Channel 400 mOhm Complementary PowerTrench MOSFET-SC-70-6

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1925
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-25V
Drain-Source On Resistance-Max: 0.4Ω/1.1Ω
Rated Power Dissipation: 300|mW
Qg Gate Charge: 1.03nC/1.2nC
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The FDG8842CZ N & P-Channel logic level enhancement mode field effect transistors are produced using a very high density process especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values

Features:

  • Q1: N-Channel
  • Max rDS(on) = 0.4O at VGS = 4.5 V, ID = 0.75 A
  • Max rDS(on) = 0.5O at VGS = 2.7 V, ID = 0.67 A
  • Q2: P-Channel
  • Max rDS(on) = 1.1O at VGS = –4.5 V, ID = –0.41 A
  • Max rDS(on) = 1.5O at VGS = –2.7 V, ID = –0.25 A
  • Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.5 V)
  • Very small package outline SC70-6
  • RoHS Compliant
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.49
USD
Quantity
Web Price
1
$0.49
50
$0.385
100
$0.37
500
$0.335
1,500+
$0.31
Product Variant Information section