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Manufacturer Part #


N-Channel 25 V 4 Ohm Surface Mount Digital FET - SOT-23-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 0.35|W
Qg Gate Charge: 0.7nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The FDV301N is a 25 V 5 Ω N-Channel logic level enhancement mode field effect transistor is produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values


  • 25 V, 0.22 A continuous, 0.5 A Peak.
  • RDS(ON) = 5 Ω @ VGS= 2.7 V,
  • RDS(ON) = 4 Ω @ VGS= 4.5 V.
  • Very low level gate drive requirements
  • Operates in 3 V circuits. VGS(th) 1.5 V.
  • Gate-Source Zener for ESD ruggedness.
  • 6 kV Human Body Model.
  • Replace multiple NPN digital transistors with one DMOS FET.


  • Load switch
  • DC/DC converter
  • Motor drives
Pricing Section
Web Price:
$0.235 USD Each
Cost Per Unit
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.

$7.00 reeling fee is amortized over the number of components for each reel.
Mini-Reels are a custom product and are non-cancelable and non-returnable.