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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 19,980

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $0.615
250 $0.385
500 $0.37
1,000 $0.355
2,500+ $0.335


Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 600V
Drain-Source On Resistance-Max 11.5Ω
Rated Power Dissipation 2.1W
Qg Gate Charge 4.8nC
Gate-Source Voltage-Max [Vgss] 30V
Drain Current 0.2A
Turn-on Delay Time 7ns
Turn-off Delay Time 13ns
Rise Time 21ns
Fall Time 27ns
Operating Temp Range -55°C to +150°C
Gate Source Threshold 4V
Input Capacitance 130pF
Features and Applications

The FQT1N60CTF_WS is a 600 V 11.5 Ω N-Channel enhancement mode power field effect transistor produced using proprietary, planar stripe, DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode


  • RDS(on) = 9.3 Ω (Typ.)@ VGS = 10 V, ID = 0.1 A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 3.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant


  • Automotive
  • DC/ DC converters
  • Power management
  • Battery operated products