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Manufacturer Part #

FQT1N60CTF-WS

N-Channel 600 V 11.5 Ohm Surface Mount Mosfet - SOT-223

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1835
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 11.5Ω
Rated Power Dissipation: 2.1W
Qg Gate Charge: 4.8nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 0.2A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 13ns
Rise Time: 21ns
Fall Time: 27ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 130pF
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Features and Applications

The FQT1N60CTF_WS is a 600 V 11.5 Ω N-Channel enhancement mode power field effect transistor produced using proprietary, planar stripe, DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

Features:

  • RDS(on) = 9.3 Ω (Typ.)@ VGS = 10 V, ID = 0.1 A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 3.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications:

  • Automotive
  • DC/ DC converters
  • Power management
  • Battery operated products

     

     

     

     

Pricing Section
Stock
11,980
Web Price:
$0.615 USD Each
Total
$8.23
USD
Cost Per Unit
$4.115

$7.00 reeling fee is amortized over the number of components for each reel.
Mini-Reels are a custom product and are non-cancelable and non-returnable.

Product Variant Information section