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Manufacturer Part #

GAN063-650WSAQ

GAN063 Series 650 V 50 mOhm 143 W Through Hole Gallium Nitride FET - TO-247-3

Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 1940
Product Specification Section
Technical Attributes
Attributes Table
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 143W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 34.5A
Turn-on Delay Time: 57ns
Turn-off Delay Time: 88ns
Rise Time: 10ns
Fall Time: 11ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.9V
Technology: GaN
Input Capacitance: 1000pF
Package Style:  TO-247-3
Mounting Method: Surface Mount
Pricing Section
Stock:
210
Minimum Order:
30
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Total
$272.70
USD
Quantity
Web Price
30+
$9.09
Product Variant Information section