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Manufacturer Part #

IGT60R190D1SATMA1

IGT60R190D1S: 600 V 12.5A CoolGaN™ Enhancement-Mode Power Transistor-PG-HSOF-8-3

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1709
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 55.5W
Qg Gate Charge: 3.2nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 12.5A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 12ns
Rise Time: 5ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Technology: GaN
Input Capacitance: 157pF
Package Style:  PG-HSOF-8-3
Mounting Method: Surface Mount
Features and Applications

Infineon Technologies has extended its CoolGaN™ series of ultra-high efficiency Gallium Nitride (GaN) power transistors with the introduction of two new devices

APPLICATIONS
• Low-power switch-mode power supplies
• Telecoms rectifiers
• Servers
• Adapters and chargers
• Wireless charging
• Hi-fi and audio equipment

FEATURES
• Thermally-efficient surface-mount packages
• Low capacitance
• High quality and reliability
• Devices can be paralleled

Pricing Section
Stock
10
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$15.38
USD
Quantity
Web Price
1
$15.38
100
$11.54
250
$10.90
500
$10.44
1,000+
$10.00
Product Variant Information section