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Manufacturer Part #

IPDD60R050G7XTMA1

N-Channel 600 V 50 mOhm 68 nC CoolMOS™ G7 Power Transistor - HDSOP-10

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 50mΩ
Rated Power Dissipation: 278W
Qg Gate Charge: 68nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 47A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 72ns
Rise Time: 6ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Height - Max: 2.35mm
Length: 15.6mm
Input Capacitance: 2670pF
Package Style:  HDSOP-10
Mounting Method: Surface Mount
Features & Applications

Double DPAK (DDPAK) Innovative top-side cooled SMD solution for high power applications.

Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies

Pricing Section
Stock:
0
Minimum Order:
1,700
Multiple Of:
1,700
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$8,330.00
USD
Quantity
Web Price
1,700+
$4.90