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Manufacturer Part #

IRF135SA204

N-Channel 135 V 5.9 mOhm 315 nC HEXFET® Power MOSFET - D2PAK-7

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1917
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 135V
Drain-Source On Resistance-Max: 5.9mΩ
Rated Power Dissipation: 500W
Qg Gate Charge: 210nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 160A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 140ns
Rise Time: 56ns
Fall Time: 56ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 11690pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
800
Multiple Of:
800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,232.00
USD
Quantity
Web Price
800+
$2.79
Product Variant Information section