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Manufacturer Part #

NDS355AN

N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.085Ω
Rated Power Dissipation: 0.46|W
Qg Gate Charge: 5nC
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The NDS355AN is a Part of NDS Series N-Channel Logic Level Enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

  • 1.7 A, 30 V
  • RDS(ON) = 0.125Ω @ VGS= 4.5 V
  • RDS(ON) = 0.085 Ω @ VGS= 10 V
  • Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • Compact industry standard SOT-23 surface mount package.

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Stock:
69,858
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.44
USD
Quantity
Web Price
1
$0.44
50
$0.27
100
$0.25
500
$0.205
1,500+
$0.179