text.skipToContent text.skipToNavigation

Manufacturer Part #

SCT3120ALGC11

SCT3120AL Series 650 V 21 A 156 mOhm N-Channel SiC Power Mosfet - TO-247N

Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code: 1618
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 156mΩ
Rated Power Dissipation: 103|W
Qg Gate Charge: 38nC
Mounting Method: Through Hole
Pricing Section
Stock
90
Minimum Order:
30
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$182.40
USD
Quantity
Web Price
30
$6.08
90
$4.91
150
$4.79
600
$4.49
900+
$4.40
Product Variant Information section