Manufacturer Part #
Single N-Channel 60 V 156 mOhm Surface Mount Power Mosfet - SOT-23-3
|Standard Pkg:|| |
Product Variant Information section
3000 per Reel
Vishay SI2308BDS-T1-E3 - Product Specification
As part of the Vishay Siliconix commitment to delivering customers with reliable and cost-effective products, we are announcing the expansion of assembly and test capacity in our trade-friendly facility in Kaohsiung, Taiwan on selected LVM Power MOSFETs. The package types included are the TSOP6 and SSOT23. Power MOSFETs shipped from this facility will be tariff-free. This advisory is intended for US based customers and orders.To take advantage of this tariff-free initiative, customers will need to order the parts with a new ordering prefix code�_BE3� (instead of our standard _GE3). The table showing the current and new ordering codes can be found on page 2, 3 and 4 of this document.
Vishay SI2308BDS-T1-E3 - Technical Attributes
|Drain-to-Source Voltage [Vdss]:||60V|
|Drain-Source On Resistance-Max:||156mΩ|
|Rated Power Dissipation:||1.66|W|
|Qg Gate Charge:||6.8nC|
|Package Style:||SOT-23 (SC-59,TO-236)|
|Mounting Method:||Surface Mount|
$Features & Applications
The SI2308BDS-T1-E3 is a N-Channel 60-V (D-S) MOSFET.
It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a TO-236 (SSOT23) package.
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- Battery Switch
- DC/DC Converter
3000 per Reel