Manufacturer Part #
SiA433EDJ Series P-Channel 20 V 15 mOhm 19 W SMT Mosfet - PowerPAK SC-70-6L
|Standard Pkg:|| |
Product Variant Information section
Additional Commercial Power MOSFET Test Capacity DESCRIPTION OF CHANGE: Vishay is pleased to announce additional test capacity for PPAKSC70 products at our manufacturing subcontractor partner Unisem Group. Located in Ipoh, Malaysia, Unisem has been a manufacturing partner of Vishay for over 15 years including for PPAKSC70 commercial MOSFET products. Unisem is ISO9001/14001 and TS16949 certified. Adding testing capacity at Unisem will create a turn-key solution for Vishay's Low Voltage MOSFET production in PPAKSC70 packages, therefore streamlining manufacturing to improve production flow from wafer probe through tape-and-reel. Unisem's test QA systems are consistent with Vishay including Gage R&R, Calibration techniques, Bin methodology and ESD Controls.
|Drain-to-Source Voltage [Vdss]:||20V|
|Drain-Source On Resistance-Max:||0.015Ω|
|Rated Power Dissipation:||19|W|
|Qg Gate Charge:||50nC|
|Mounting Method:||Surface Mount|
Features & Applications
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors.
Vishay Intertechnology introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK® SC-70.
The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.
The SiA433EDJ offers an ultra-low on-resistance of 18 mΩ at 4.5 V, 26 mΩ at 2.5 V, and 65 mΩ at 1.8 V. These values are 40 % lower at 4.5 V and 30 % lower at 2.5 V than the closest competing p-channel device.
This new MOSFET is also the only 20-V device with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.
The SiA433EDJ will be used as load, battery, and charging switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players.