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Manufacturer Part #

SIA433EDJ-T1-GE3

SiA433EDJ Series P-Channel 20 V 15 mOhm 19 W SMT Mosfet - PowerPAK SC-70-6L

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.015Ω
Rated Power Dissipation: 19|W
Qg Gate Charge: 50nC
Package Style:  POWERPAK-SC-70-6L
Mounting Method: Surface Mount
Features & Applications
 

Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors.

Vishay Intertechnology introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK® SC-70.

The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.

The SiA433EDJ offers an ultra-low on-resistance of 18 mΩ at 4.5 V, 26 mΩ at 2.5 V, and 65 mΩ at 1.8 V. These values are 40 % lower at 4.5 V and 30 % lower at 2.5 V than the closest competing p-channel device.

This new MOSFET is also the only 20-V device with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.

The SiA433EDJ will be used as load, battery, and charging switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players.

Pricing Section
Stock:
3,000
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
30,000
Factory Lead Time:
12 Weeks
Total
$0.69
USD
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Quantity
Web Price
1
$0.685
50
$0.465
100
$0.435
500
$0.37
1,500+
$0.33