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Manufacturer Part #

SPD08P06PGBTMA1

Single P-Channel 60 V 300 mOhm 10 nC SIPMOS® Power Mosfet - TO-252-3

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 300mΩ
Rated Power Dissipation: 42|W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.83A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 48ns
Rise Time: 46ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 335pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.82
USD
Quantity
Web Price
1
$0.815
50
$0.515
100
$0.48
250
$0.43
500+
$0.395
Product Variant Information section