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Manufacturer Part #

STD65N55F3

N-Channel 55 V 8.5 mOhm Surface Mount STripFET Power MosFet - TO-252

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1745
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 8.5mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 33.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 35ns
Rise Time: 50ns
Fall Time: 11.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 2200pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
10,000
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Total
$7,700.00
USD
Quantity
Web Price
2,500
$0.855
5,000+
$0.77
Product Variant Information section