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Manufacturer Part #

TSM60NB190CM2 RNG

Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R

Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 150.6W
Qg Gate Charge: 31nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 18A
Turn-on Delay Time: 36ns
Turn-off Delay Time: 95ns
Rise Time: 21ns
Fall Time: 21ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 1273pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
2,400
Multiple Of:
2,400
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Total
$4,440.00
USD
Quantity
Web Price
2,400+
$1.85
Product Variant Information section