text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 4,432

On Order:Order inventroy details 12,000
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $1.59
30 $1.48
100 $1.45
300 $1.42
1,000+ $1.38


Attributes Table
Memory Density 512kb
Memory Organization 64k x 8
Supply Voltage-Nom 4.5V to 5.5V
Write Cycle Time-Max (tWC) 10ms
Access Time-Max 70ns
Features and Applications

The GLS29EE512-70-4C-NHE is a 64K x8 CMOS, Page-Write EEPROM manufactured with high-performance Super- Flash technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The GLS29EE512 writes with a single power supply. Internal Erase/Program is transparent to the user. The GLS29EE512 conforms to JEDEC standard pin assignments for byte-wide memories. Featuring high performance Page-Write, the GLS29EE512 provides a typical Byte-Write time of 39 μsec.


  • Single Voltage Read and Write Operations 4.5-5.5 V for GLS29EE512
  • Superior Reliability:
    • Endurance: 100,000 Cycles (typical)
    • Greater than 100 years Data Retention
  • Low Power Consumption:
    • Active Current: 20 mA (typical)
    • Standby Current: 10 μA (typical)
  • Fast Page-Write Operation:
    • 128 Bytes per Page, 512 Pages
    • Page-Write Cycle: 5 ms (typical)
    • Complete Memory Rewrite: 2.5 sec (typical)
    • Effective Byte-Write Cycle Time: 39 μs (typical)
  • Fast Read Access Time
  • 4.5-5.5 V operation: 70 ns
  • Latched Address and Data
  • Automatic Write Timing
  • Internal VPP Generation
  • End of Write Detection
  • Hardware and Software Data Protection
  • Flash EEPROM Pinouts and command sets
  • All non-Pb (lead-free) devices are RoHS compliant