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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 2,639

On Order:Order inventroy details 13,580
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $3.42
194 $2.86
291 $2.82
485 $2.77
970+ $2.70
Total:

$3.42

USD
Attributes
Attributes Table
FRAM Type Non Volatile
Memory Density 64kb
Interface Type SPI
Memory Organization 8 K x 8
Supply Voltage-Nom 2.7V to 3.65V
Access Time-Max 20ns
Temperature Range -40°C to +85°C
Number of Words 8 K
Word Length 8b
Supply Current 3mA
Power Dissipation 1W
Storage Temperature Range -55°C to +125°C
No of Terminals 8
Moisture Sensitivity Level 3
Features and Applications

The FM25CL64B-G is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process, available in a SOIC-8 package.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM.

Features:

  • 64K bit Ferroelectric Nonvolatile RAM:
    • Organized as 8,192 x 8 bits
    • High Endurance 100 Trillion (1014) Read/Writes
    • 38 Year Data Retention (@ +75ºC)
    • NoDelay™ Writes
    • Advanced High-Reliability Ferroelectric Process
  • Very Fast Serial Peripheral Interface - SPI:
    • Up to 20 MHz Frequency
    • Direct Hardware Replacement for EEPROM
    • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
  • Sophisticated Write Protection Scheme:
    • Hardware Protection
    • Software Protection
  • Low Power Consumption:
    • Low Voltage Operation 2.7-3.65V
    • 200 µA Active Current (1 MHz)
    • 3 µA (typ.) Standby Current
  • Industry Standard Configuration:
    • Industrial Temperature -40°C to +85°C
    • 8-pin “Green”/RoHS SOIC and TDFN Packages