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Product Variant Information section
Product Specification Section
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Minimum Order: 696
Multiple Of: 696
Quantity Web Price
696+ $18.17


Attributes Table
Memory Density 4Mb
Interface Type Parallel
Memory Organization 512 K x 8
Supply Voltage-Nom 3.3V
Access Time-Max 35ns
Temperature Range 0°C to 70°C
Features and Applications

The MR2A08AMA35 is a magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. It is available in 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. and is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.


  • Fast 35ns Read/Write Cycle
  • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
  • Unlimited Read & Write Endurance
  • Data Always Non-volatile for >20 years at Temperature
  • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
  • Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, improving reliability
  • 3.3 Volt Power Supply
  • Automatic Data Protection on Power Loss
  • Commercial, Industrial, Automotive Temperatures
  • RoHS-Compliant SRAM TSOP2 Package
  • RoHS-Compliant SRAM BGA Package
  • AEC-Q100 Grade 1 Qualified

View the available MR2A08A series of MRAMs