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Manufacturer Part #


MR2A16 Series 256 K x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44

Mfr. Name: Everspin Technologies
Standard Pkg:
Product Variant Information section
Date Code: 1750
Product Specification Section
Technical Attributes
Attributes Table
Memory Density: 4Mb
Interface Type: Parallel
Memory Organization: 256 K x 16
Supply Voltage-Nom: 3V to 3.6V
Access Time-Max: 35ns
Temperature Range: -40°C to +85°C
Package Style:  TSOP-44
Mounting Method: Surface Mount
Features and Applications
The MR2A16ACYS35 is a 4 Mb magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. It is available in 44-pin thin small outline package (TSOP Type 2).

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.


  • Fast 35 ns Read/Write Cycle
  • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
  • Unlimited Read & Write Endurance
  • Data Non-volatile for >20 years at Temperature
  • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
  • Replace battery-backed SRAM solutions with MRAM to improve reliability
  • 3.3 Volt Power Supply
  • Automatic Data Protection on Power Loss
  • Commercial, Industrial, Extended Temperatures
  • RoHS-Compliant SRAM TSOP2 and BGA Packages - MSL Level 3
  • AEC-Q100 Grade 1 option

View the available MR2A16A series of MRAMs

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