text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 2,045

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1+ $37.81
Total:

$37.81

USD
Attributes
Attributes Table
Memory Density 16Mb
Interface Type Parallel
Memory Organization 1 M x 16
Supply Voltage-Nom 3V to 3.6V
Access Time-Max 35ns
Temperature Range -40°C to +85°C
Features and Applications

The MR4A16BCYS35 is a magneto resistive random access memory (MRAM) organized as 1,048,576 words of 16 bits.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. It is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

Features:

  • +3.3 Volt power supply
  • Fast 35 ns read/write cycle
  • SRAM compatible timing
  • Unlimited read & write endurance
  • Data always non-volatile for >20 years at temperature
  • RoHS-compliant small footprint BGA and TSOP2 package
  • AEC-Q100 Grade 1 option in TSOP2 package

Benefits:

  • One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
  • Improves reliability by replacing battery-backed SRAM

View the available MR4A16B series of MRAMs